Hydrogen-induced changes in the breakdown voltage of InP HEMTs

The hydrogen-induced piezoelectric effect in InP HEMTs

Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift, AVT. This is a serious reliability concern. This effect has been attributed to a H-induced piezoelectric effect. Formation of TiHX expands the Ti layer in the gate, causing mechanical stress in the underlying semiconductor. This induces piezoelectric charge in the heterostructure underneath the gate that shifts ...

Breakdown behaviour of high-voltage GaN-HEMTs

A Model for Hydrogen-Induced Piezoelectric Effect in InP HEMTs and GaAs PHEMTs

We have developed a model for the impact of the hydrogen-induced piezoelectric effect on the threshold voltage of InP HEMTs and GaAs PHEMTs. We have used two-dimensional (2-D) finite element simulations to calculate the mechanical stress caused by a Ti-containing metal gate that has expanded due to hydrogen absorption. This has allowed us to map the 2-D piezoelectric charge distribution in the ...

the effect of aqueous extract of garlic on formalin-induced pain in male rats

چکیده اثر عصاره آبی سیر بر درد ناشی از آزمون فرمالین در موش صحرایی نر به کوشش نرگس اسکندری روزبهانی زمینه و هدف: گیاه سیر از خانواده لیلیاسه و گونهallium sativum بومی آسیای میانه بوده و از دوران ،باستان تاکنون به خواص درمانی متفاوت آن مثل: کاهندگی قندخون، کلسترول خون، فشار خون، اثرات مفیدآن بر دستگاه قلبی عروقی و بیماریهای انعقادی خون، اثرات آنتی اکسیداتیو، درمان بیماریهای تنفسی وگوارشی، ا...

Power Limiting Mechanisms in InP HEMTs

The InAlAs/InGaAs High Electron Mobility Transistor (HEMT) fabricated on InP has proven to be the fastest transistor ever produced. It also appears to be the best candidate for power amplification at mm-wave frequencies. To date, however, very good highfrequency power performance has not been realized in these devices, and the lack of a clear understanding of the power-limiting mechanisms has h...